GAAS LEDS WITH N-I-P-I ACTIVE LAYERS FABRICATED BY SELECTIVE CONTACT DIFFUSION

被引：0
|
作者：
ACKLEY, DE [1 ]
MANTZ, J [1 ]
LEE, H [1 ]
NOURI, N [1 ]
SHIEH, CL [1 ]
机构：
[1] SIEMENS RES & TECHNOL LABS,PRINCETON,NJ 08540
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 12期
关键词：
D O I：
10.1109/16.8893
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2455 / 2455
页数：1
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