A Wide-Tuning-Range Low-Phase-Noise mm-Wave CMOS VCO With Switchable Transformer-Based Tank

被引:20
|
作者
Kashani, Milad Haghi [1 ]
Tarkeshdouz, Amirahmad [1 ]
Molavi, Reza [1 ]
Afshari, Ehsan [2 ]
Mirabbasi, Shahriar [1 ]
机构
[1] Univ British Columbia, Dept Elect & Comp Engn, Vancouver, BC V6T 1Z4, Canada
[2] Univ Michigan, Dept Elect & Comp Engn, Ann Arbor, MI 48109 USA
来源
IEEE SOLID-STATE CIRCUITS LETTERS | 2018年 / 1卷 / 04期
基金
加拿大自然科学与工程研究理事会;
关键词
Complementary metal-oxide semiconductor (CMOS); low phase noise; millimeter-wave (mm-wave) voltage-controlled oscillator (VCO); switchable transformer-based VCO; wide tuning range (TR);
D O I
10.1109/LSSC.2018.2851498
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
In this letter, we present a millimeter-wave (mm-wave) complementary metal-oxide semiconductor (CMOS) voltage-controlled oscillator (VCO) that has a wide frequency tuning range (TR) and low phase noise (PN). The proposed architecture benefits from a switchable transformer-based LC-tank which significantly improves the TR without compromising the PN performance. The proposed 3-D transformer consists of three mutually coupled, switched spiral coils. The secondary and tertiary spiral coils are switched in or out of the circuit and depending on the switch states, the proposed VCO achieves four overlapping frequency sub-bands and a wide overall TR. To lower the loading effect of the switches, we present a design guideline which is based on the mutual coupling between the auxiliary coils. As a proof-of-concept, a mm-wave VCO is implemented in a 65-nm CMOS process. Based on the measurement results, the VCO achieves an average PN of -111.9 dBc/Hz at 10 MHz offset over the entire frequency TR, and a TR of similar to 18%, from 50.1 to 59.8 GHz, resulting in a figure-of-merit (FOM) incorporating the TR (FOMT) of -184 dBc/Hz. The VCO core consumes 6.2 mW from a 1-V supply and excluding the pads occupies a compact silicon area of 0.06 mm(2).
引用
收藏
页码:82 / 85
页数:4
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