ANODIC OXIDES ON GAAS .2. ANODIC AL2O3 AND COMPOSITE OXIDES ON GAAS

被引：4
作者：
BAYRAKTAROGLU, B
HARTNAGEL, HL
机构：
来源：
INTERNATIONAL JOURNAL OF ELECTRONICS | 1978年 / 45卷 / 05期
关键词：
D O I：
10.1080/00207217808900936
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：449 / 463
页数：15
相关论文
共 50 条
[41]   ELECTRONIC PROPERTIES OF ANODIC OXIDES GROWN ON GAAS0.6P0.4 [J].
AHRENKIEL, RK ;
MOSER, F ;
LYU, SL ;
COBURN, TJ .
THIN SOLID FILMS, 1979, 56 (1-2) :117-128
[42]   CAPACITANCE-VOLTAGE CHARACTERISTICS OF AL-PLASMA ANODIC AL2O3-GAAS DIODES [J].
HIRAYAMA, Y ;
KOSHIGA, F ;
SUGANO, T .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4697-4699
[43]   Preparation and characterization of MgO-gamma Al2O3 composite oxides [J].
Gomez, MF ;
Cadus, LE ;
Abello, MC .
SOLID STATE IONICS, 1997, 98 (3-4) :245-249
[44]   THE CHARACTERIZATION OF AL2O3 PREPARED BY ANODIC-OXIDATION [J].
YEH, CF ;
CHENG, JY ;
LU, JH .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (6A) :2803-2808
[45]   ON THE DUPLEX LAYER NATURE OF ANODIC AL2O3 FILMS [J].
GOMEZALEIXANDRE, C ;
MONTERO, I ;
ALBELLA, JM .
JOURNAL OF APPLIED ELECTROCHEMISTRY, 1986, 16 (06) :964-966
[46]   POROUS ANODIC AL2O3 LAYERS FOR SUPERCONDUCTING FILMS [J].
PRISCHEPA, SL ;
LYNKOV, LM ;
LYKOV, AN ;
DEDYU, VI .
CRYOGENICS, 1994, 34 :851-853
[47]   GROWTH OF AL2O3 LAYER ON MBE GAAS [J].
HIROSE, M ;
FISCHER, A ;
PLOOG, K .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 45 (02) :K175-K177
[48]   STUDIES FOR AL2O3 FILMS AND COATED GAAS [J].
WANG, DH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) :C431-C431
[49]   Nitrogen passivation at GaAs:Al2O3 interfaces [J].
Guo, Yuzheng ;
Lin, Liang ;
Robertson, John .
APPLIED PHYSICS LETTERS, 2013, 102 (09)
[50]   EFFECTS OF GROWTH AND PROCESSING PARAMETERS ON THE DIELECTRIC STRENGTH OF ANODIC OXIDES ON N-GAAS [J].
KOCHHAR, M ;
DAGA, OP ;
SINGH, BR ;
KHOKLE, WS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (03) :C88-C88
12345