AN IMPROVED PRESENTATION OF THE POTENTIAL PROFILE IN LINEARLY GRADED P-N-JUNCTIONS

被引：2

作者：

JINDAL, C

PANAYOTATOS, P

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1987.23159

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1832 / 1834

页数：3

共 6 条

[1] COLLATZ L, 1960, NUMERICAL TREATMENT, P69
[2] KENNEDY DP, 1967, IBM J RES DEV MAY, P252
[3] POTENTIAL DISTRIBUTION AND CAPACITANCE OF A GRADED P-N JUNCTION
MORGAN, SP
SMITS, FM
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (06): : 1573 - 1602
[4] NUYTS W, 1967, ELECTRON LETT, V5, P54
[5] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS
SHOCKLEY, W
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489
[6] WARNER RM, 1983, TRANSISTORS FUNDAMEN, pCH5