INTERBAND SCATTERING EFFECTS ON SECONDARY IONIZATION COEFFICIENTS IN GAAS

被引：53
作者：
LAW, HD
LEE, CA
机构：
来源：
SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 02期
关键词：
D O I：
10.1016/0038-1101(78)90262-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：331 / 340
页数：10
相关论文
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