EVOLUTION OF ELECTRONIC-PROPERTIES AT THE P-GAAS(CS,O) SURFACE DURING NEGATIVE ELECTRON-AFFINITY STATE FORMATION

被引：24
作者：
ALPEROVICH, VL
PAULISH, AG
SCHEIBLER, HE
TEREKHOV, AS
机构：
[1] Institute of Semiconductor Physics
来源：
APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 16期
关键词：
D O I：
10.1063/1.113923
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The evolution of surface band bending and surface photovoltage was monitored in situ by photoreflectance spectroscopy during activation of the surface of epitaxial GaAs to the state of negative electron affinity by successive deposition of cesium and oxygen in a standard]] yo-yo" technique. Considerable variations of the band bending (by approximately 0.3 eV) and surface photovoltage (by three orders of magnitude) were observed. It was found that the maximum of photoemission quantum yield corresponded to unexpectedly small value of the band bending s=0.3 eV, as compared to widely accepted value of approximately 0.5 eV.© 1995 American Institute of Physics.
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页码：2122 / 2124
页数：3
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