SIC-AL INTERFACE CRYSTALLOGRAPHIC ORIENTATION RELATIONSHIP IN A SQUEEZE-CAST SICW/AL COMPOSITE

被引：5
|
作者：
GENG, L
WU, K
YAO, GK
机构：
[1] Department of Metals and Technology, Harbin Institute of Technology, Harbin, 150001
来源：
MATERIALS CHARACTERIZATION | 1995年 / 34卷 / 04期
关键词：
D O I：
10.1016/1044-5803(95)80077-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A SiC-Al interface in a squeeze-cast SiCw/6061 Al composite was studied by means of scanning transmission electron microscopy and high-resolution electron microscopy. A crystallographic orientation relationship was found at the SiC-Al interface and was identified as (01 $$($) over bar 1)(SiC)parallel to(001)(Al), [211](SiC)parallel to[100](Al). Based on crystallography theory, the formation mechanism of the orientation relationship was analyzed in detail. A semicoherent atom matching model of the SiC-Al interface was developed that can explain why the squeeze-cast SiCw/6061 Al composite has a high interface bond strength.
引用
收藏
页码：227 / 229
页数：3
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