LIFETIMES AND DIFFUSION LENGTHS OF NONEQUILIBRIUM CHARGE-CARRIERS IN SIC P-N STRUCTURES

Results on the lifetimes and diffusion lengths of nonequilibrium charge carriers in SiC p-n structures are put in systematic form. The structures were fabricated by several methods: sublimation epitaxy, ion implantation, container-free liquid-phase epitaxy, and low-temperature liquid-phase epitaxy. Data on the lifetimes and diffusion lengths have been found from measurements of current-voltage, relaxation, and photoelectric characteristics. Relationships are found between (on the one hand) the lifetimes, the diffusion lengths, and their temperature dependence and (on the other) the method by which the p-n structure was fabricated. (C) 1995 American Institute of Physics.