X-RAY-OBSERVATION OF POROUS-SILICON WETTING

被引：41

作者：

BELLET, D

DOLINO, G

机构：

[1] Laboratoire de Spectrométrie Physique, Université Joseph Fourier (Grenoble I) (URA 08 Associée Au CNRS), 38402 Saint-Martin Heres Cedex

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.50.17162

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-resolution x-ray-diffraction experiments show that the lattice parameter of porous-silicon layers expands when wetted by an alcohol or an alkane. This phenomenon is nearly reversible when the alkane is removed while there is a time-dependent drift during alcohol wetting. The experimental results obtained for several alkanes and for two types of samples (p and p+ type) reveal that the magnitude of the lattice-parameter change is correlated with the size of the nanocrystallites rather than with the nature of the alkane. We propose that the lattice expansion is due to a change of the porous-silicon surface stress induced by wetting. © 1994 The American Physical Society.

引用

页码：17162 / 17165

页数：4

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