X-RAY-OBSERVATION OF POROUS-SILICON WETTING

被引:41
作者
BELLET, D
DOLINO, G
机构
[1] Laboratoire de Spectrométrie Physique, Université Joseph Fourier (Grenoble I) (URA 08 Associée Au CNRS), 38402 Saint-Martin Heres Cedex
来源
PHYSICAL REVIEW B | 1994年 / 50卷 / 23期
关键词
D O I
10.1103/PhysRevB.50.17162
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High-resolution x-ray-diffraction experiments show that the lattice parameter of porous-silicon layers expands when wetted by an alcohol or an alkane. This phenomenon is nearly reversible when the alkane is removed while there is a time-dependent drift during alcohol wetting. The experimental results obtained for several alkanes and for two types of samples (p and p+ type) reveal that the magnitude of the lattice-parameter change is correlated with the size of the nanocrystallites rather than with the nature of the alkane. We propose that the lattice expansion is due to a change of the porous-silicon surface stress induced by wetting. © 1994 The American Physical Society.
引用
收藏
页码:17162 / 17165
页数:4
相关论文
共 32 条
[1]  
ADAMSON AW, 1976, PHYSICAL CHEM SURFAC
[2]   DETERMINATION OF LATTICE-PARAMETER AND ELASTIC PROPERTIES OF POROUS SILICON BY X-RAY-DIFFRACTION [J].
BARLA, K ;
HERINO, R ;
BOMCHIL, G ;
PFISTER, JC ;
FREUND, A .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (03) :727-732
[3]   X-RAY TOPOGRAPHIC CHARACTERIZATION OF POROUS SILICON LAYERS [J].
BARLA, K ;
BOMCHIL, G ;
HERINO, R ;
PFISTER, JC ;
BARUCHEL, J .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (03) :721-726
[4]   A STUDY OF SILICON MBE ON POROUS SILICON SUBSTRATES [J].
BEALE, MIJ ;
CHEW, NG ;
CULLIS, AG ;
GASSON, DB ;
HARDEMAN, RW ;
ROBBINS, DJ ;
YOUNG, IM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :732-735
[5]   MICROSTRUCTURE AND FORMATION MECHANISM OF POROUS SILICON [J].
BEALE, MIJ ;
CHEW, NG ;
UREN, MJ ;
CULLIS, AG ;
BENJAMIN, JD .
APPLIED PHYSICS LETTERS, 1985, 46 (01) :86-88
[6]   X-RAY STUDY OF THE ANODIC-OXIDATION OF P+ POROUS SILICON [J].
BELLET, D ;
BILLAT, S ;
DOLINO, G ;
LIGEON, M ;
MEYER, C ;
MULLER, F .
SOLID STATE COMMUNICATIONS, 1993, 86 (01) :51-54
[7]   STUDIES OF COHERENT AND DIFFUSE-X-RAY SCATTERING BY POROUS SILICON [J].
BELLET, D ;
DOLINO, G ;
LIGEON, M ;
BLANC, P ;
KRISCH, M .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (01) :145-149
[8]  
BELLET D, UNPUB
[9]   VISIBLE-LIGHT EMISSION FROM A POROUS SILICON SOLUTION DIODE [J].
BRESSERS, PMMC ;
KNAPEN, JWJ ;
MEULENKAMP, EA ;
KELLY, JJ .
APPLIED PHYSICS LETTERS, 1992, 61 (01) :108-110
[10]   PHOTOLUMINESCENCE OF HIGH POROSITY AND OF ELECTROCHEMICALLY OXIDIZED POROUS SILICON LAYERS [J].
BSIESY, A ;
VIAL, JC ;
GASPARD, F ;
HERINO, R ;
LIGEON, M ;
MULLER, F ;
ROMESTAIN, R ;
WASIELA, A ;
HALIMAOUI, A ;
BOMCHIL, G .
SURFACE SCIENCE, 1991, 254 (1-3) :195-200