GERMANIUM SELENIDE - A RESIST FOR LOW-ENERGY ION-BEAM LITHOGRAPHY

被引:36
作者
WAGNER, A
BARR, D
VENKATESAN, T
CRANE, WS
LAMBERTI, VE
TAI, KL
VADIMSKY, RG
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 04期
关键词
D O I
10.1116/1.571211
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:1363 / 1367
页数:5
相关论文
共 8 条
[1]  
BALASUBRAMANYAM K, 1980, 22ND EL MAT C ITH
[2]   ELECTRON-DIFFRACTION STUDIES OF AG PHOTODOPING IN GEXSE1-X GLASS-FILMS [J].
CHEN, CH ;
TAI, KL .
APPLIED PHYSICS LETTERS, 1980, 37 (07) :605-607
[3]   ION-BEAM EXPOSURE CHARACTERISTICS OF RESISTS [J].
HALL, TM ;
WAGNER, A ;
THOMPSON, LF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1889-1892
[4]  
KELLY J, 1972, STANFORD RES I REPOR
[5]   ASYMMETRIC ELECTROSTATIC LENS FOR FIELD-EMISSION MICROPROBE APPLICATIONS [J].
ORLOFF, J ;
SWANSON, LW .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) :2494-2501
[6]   HIGH-INTENSITY SCANNING ION PROBE WITH SUBMICROMETER SPOT SIZE [J].
SELIGER, RL ;
WARD, JW ;
WANG, V ;
KUBENA, RL .
APPLIED PHYSICS LETTERS, 1979, 34 (05) :310-312
[7]   BILEVEL HIGH-RESOLUTION PHOTOLITHOGRAPHIC TECHNIQUE FOR USE WITH WAFERS WITH STEPPED AND-OR REFLECTING SURFACES [J].
TAI, KL ;
SINCLAIR, WR ;
VADIMSKY, RG ;
MORAN, JM ;
RAND, MJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1977-1979
[8]   NOVEL INORGANIC PHOTORESIST UTILIZING AG PHOTODOPING IN SE-GE GLASS-FILMS [J].
YOSHIKAWA, A ;
OCHI, O ;
NAGAI, H ;
MIZUSHIMA, Y .
APPLIED PHYSICS LETTERS, 1976, 29 (10) :677-679