INELASTIC LIGHT-SCATTERING IN THE REGIMES OF THE INTEGER AND FRACTIONAL QUANTUM HALL-EFFECTS

被引：17
作者：
PINCZUK, A
DENNIS, BS
PFEIFFER, LN
WEST, KW
机构：
[1] AT and T Bell Labs., Murray Hill, NJ
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 11期
关键词：
D O I：
10.1088/0268-1242/9/11S/003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Recent resonant inelastic light scattering experiments in the fractional quantum Hall regime highlight the power of the method in studies of electron-electron interactions in semiconductors of reduced dimensions. We review here light scattering experiments that determine gap excitations in the regimes of the integer and fractional quantum Hall effects. At integer values of the Landau level filling factor we consider inter-Landau level excitations. In the fractional quantum Hall regime we discuss the determination of long-wavelength gap excitations and spin waves in the incompressible quantum fluid at filling factor 1/3.
引用
收藏
页码：1865 / 1870
页数：6
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