EDSR INVESTIGATION OF N-TYPE SILICON DEFORMED UNDER HIGH-STRESS

被引：5

作者：

WATTENBACH, M

ALEXANDER, H

机构：

[1] Physikalisches Institut, Universität Zu Köln, Abteilung Für Metallphysik

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1993年 / 138卷 / 02期

关键词：

D O I：

10.1002/pssa.2211380229

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Combined resonance of the EDSR type is investigated with n-type silicon crystals plastically deformed under high stress. The signal is due to electrons oscillating along straight segments of 90-degrees partial dislocations. The effect is closely related to microwave conductivity.

引用

页码：607 / 615

页数：9

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