EDSR INVESTIGATION OF N-TYPE SILICON DEFORMED UNDER HIGH-STRESS

被引：5
|
作者：
WATTENBACH, M
ALEXANDER, H
机构：
[1] Physikalisches Institut, Universität Zu Köln, Abteilung Für Metallphysik
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1993年 / 138卷 / 02期
关键词：
D O I：
10.1002/pssa.2211380229
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Combined resonance of the EDSR type is investigated with n-type silicon crystals plastically deformed under high stress. The signal is due to electrons oscillating along straight segments of 90-degrees partial dislocations. The effect is closely related to microwave conductivity.
引用
收藏
页码：607 / 615
页数：9
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