HIGH-GAIN OPTICAL-DETECTION WITH GAAS FIELD-EFFECT TRANSISTORS

被引：25

作者：

MACDONALD, RI

机构：

来源：

APPLIED OPTICS | 1981年 / 20卷 / 04期

关键词：

D O I：

10.1364/AO.20.000591

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：591 / 594

页数：4

共 10 条

[1] GAAS MESFET - HIGH-SPEED OPTICAL DETECTOR [J].

BAACK, C ;

ELZE, G ;

WALF, G .

ELECTRONICS LETTERS, 1977, 13 (07) :193-193

[2]

EDWARDS WS, COMMUNICATION

[3]

GAMMEL JC, 1980, DIGEST TOPICAL M INT

[4]

GAMMEL JC, 1978, IEEE INT ELECTRON DE

[5] LIGHT-INDUCED EFFECTS IN GAAS-FETS [J].

GRAFFEUIL, J ;

ROSSEL, P ;

MARTINOT, H .

ELECTRONICS LETTERS, 1979, 15 (14) :439-441

[6] A BROAD-BAND OPTOELECTRONIC MICROWAVE SWITCH [J].

HARA, EH ;

MACDONALD, RI .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1980, 28 (06) :662-665

[7] GAAS-MESFET DEMODULATES GIGABIT SIGNAL RATES FROM GAALAS INJECTION-LASER [J].

OSTERWALDER, JM ;

RICKETT, BJ .

PROCEEDINGS OF THE IEEE, 1979, 67 (06) :966-968

[8]

PAN JJ, 1978, 22ND SPIE INT S SAN

[9] METAL-SEMICONDUCTOR-METAL PHOTODETECTOR FOR HIGH-SPEED OPTOELECTRONIC CIRCUITS [J].

SUGETA, T ;

URISU, T ;

SAKATA, S ;

MIZUSHIMA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :459-464

[10]

SUGETA T, 1980, J APPL PHYS, V19, pL63

← 1 →