INASP ISLANDS AT THE LOWER INTERFACE OF INGAAS/INP QUANTUM-WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：0
作者：
BOHRER, J
KROST, A
BIMBERG, D
机构：
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 18期
关键词：
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The optical properties of narrow InGaAs/InP quantum wells and their dependence on the gas switching procedure during the metalorganic chemical vapor deposition growth process are studied. A transition from In1-xGaxAs monolayer to InAs1-xPx monolayer splitting is observed in the photoluminescence spectrum, if the AsH3 purging time of the InP surface is equal larger than 2 s. This transition is attributed to a P-As exchange at the lower interface (InGaAs on InP) leading to InAs1-xPx interfacial islands, which are larger than the excitonic diameter.
引用
收藏
页码：2258 / 2260
页数：3
相关论文
共 50 条
  • [41] INP GROWN ON SI SUBSTRATES WITH GAP BUFFER LAYERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    KOHAMA, Y
    KADOTA, Y
    OHMACHI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1989, 28 (08): : 1337 - 1340
  • [42] SUBSTRATE ORIENTATION EFFECTS ON DOPANT INCORPORATION IN INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    BERGER, PR
    CHU, SNG
    LOGAN, RA
    BYRNE, E
    COBLENTZ, D
    LEE, J
    HA, NT
    DUTTA, NK
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (08) : 4095 - 4097
  • [43] INTERFACE CHARACTERIZATION OF (IN,GA)AS/ALGAAS LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    KIM, J
    ALWAN, JJ
    COLEMAN, JJ
    WAYMAN, CM
    MATERIALS LETTERS, 1991, 11 (5-7) : 151 - 154
  • [44] STRAIN-INDUCED EFFECTS IN (111)-ORIENTED INASP/INP, INGAAS/INP, AND INGAAS/INALAS QUANTUM-WELLS ON INP SUBSTRATES
    CHEN, WQ
    HARK, SK
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (11) : 5747 - 5750
  • [45] LATERAL THICKNESS MODULATION OF INGAAS/INP QUANTUM-WELLS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
    COTTA, MA
    HAMM, RA
    CHU, SNG
    HARRIOTT, LR
    TEMKIN, H
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (01) : 630 - 632
  • [46] INGAAS/INP QUANTUM-WELLS AND QUANTUM WIRES GROWN BY VAPOR LEVITATION EPITAXY USING CHLORIDE TRANSPORT
    COX, HM
    MORAIS, PC
    HWANG, DM
    BASTOS, P
    GMITTER, TJ
    NAZAR, L
    WORLOCK, JM
    YABLONOVITCH, E
    HUMMEL, SG
    INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 119 - 124
  • [47] INGAAS/INP QUANTUM-WELLS AND QUANTUM WIRES GROWN BY VAPOR LEVITATION EPITAXY USING CHLORIDE TRANSPORT
    COX, HM
    MORAIS, PC
    HWANG, DM
    BASTOS, P
    GMITTER, TJ
    NAZAR, L
    WORLOCK, JM
    YABLONOVITCH, E
    HUMMEL, SG
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, : 119 - 124
  • [48] VERY HIGH-CURRENT GAIN INGAAS/INP HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    KYONO, CS
    GERRARD, ND
    PINZONE, CJ
    MAZIAR, CM
    DUPUIS, RD
    ELECTRONICS LETTERS, 1991, 27 (01) : 40 - 41
  • [49] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INP USING PHOSPHINE MODULATION
    LEE, MK
    HU, CC
    LIN, MH
    APPLIED PHYSICS LETTERS, 1993, 62 (11) : 1245 - 1247
  • [50] Interfaces of InAsP/InP multiple quantum wells grown by metalorganic vapour phase epitaxy
    Tran, C.A.
    Graham, J.T.
    Brebner, J.L.
    Journal of Electronic Materials, 1994, 23 (12): : 1291 - 1296
12345