UNIFORM SILICON P-N JUNCTIONS .2. IONIZATION RATES FOR ELECTRONS

被引：89

作者：

CHYNOWETH, AG

机构：

来源：

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D O I：

10.1063/1.1735795

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1161 / 1165

页数：5

共 11 条

[1] UNIFORM SILICON P-N JUNCTIONS .1. BROAD AREA BREAKDOWN
BATDORF, RL
CHYNOWETH, AG
DACEY, GC
FOY, PW
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (07) : 1153 - 1160
[2] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON
CHYNOWETH, AG
MCKAY, KG
[J]. PHYSICAL REVIEW, 1956, 102 (02): : 369 - 376
[3] THRESHOLD ENERGY FOR ELECTRON-HOLE PAIR-PRODUCTION BY ELECTRONS IN SILICON
CHYNOWETH, AG
MCKAY, KG
[J]. PHYSICAL REVIEW, 1957, 108 (01): : 29 - 34
[4] EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS
CHYNOWETH, AG
PEARSON, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) : 1103 - 1110
[5] IONIZATION RATES FOR ELECTRONS AND HOLES IN SILICON
CHYNOWETH, AG
[J]. PHYSICAL REVIEW, 1958, 109 (05): : 1537 - 1540
[6] CHYNOWETH AG, 1959, J APPL PHYS, V30, P1812
[7] AVALANCHE BREAKDOWN IN SILICON
MCKAY, KG
[J]. PHYSICAL REVIEW, 1954, 94 (04): : 877 - 884
[8] ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM
MCKAY, KG
MCAFEE, KB
[J]. PHYSICAL REVIEW, 1953, 91 (05): : 1079 - 1084
[9] ELECTRON EMISSION FROM SILICON P-N JUNCTIONS
SENITZKY, P
[J]. PHYSICAL REVIEW, 1959, 116 (04): : 874 - 879
[10] ON PHOTO-IONIZATION BY FAST ELECTRONS IN GERMANIUM AND SILICON
VAVILOV, VS
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 223 - 226