UNIFORM SILICON P-N JUNCTIONS .2. IONIZATION RATES FOR ELECTRONS

被引：89
作者：
CHYNOWETH, AG
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1960年 / 31卷 / 07期
关键词：
D O I：
10.1063/1.1735795
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1161 / 1165
页数：5
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共 11 条
[1]   UNIFORM SILICON P-N JUNCTIONS .1. BROAD AREA BREAKDOWN [J].
BATDORF, RL ;
CHYNOWETH, AG ;
DACEY, GC ;
FOY, PW .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (07) :1153-1160
[2]   PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J].
CHYNOWETH, AG ;
MCKAY, KG .
PHYSICAL REVIEW, 1956, 102 (02) :369-376
[3]   THRESHOLD ENERGY FOR ELECTRON-HOLE PAIR-PRODUCTION BY ELECTRONS IN SILICON [J].
CHYNOWETH, AG ;
MCKAY, KG .
PHYSICAL REVIEW, 1957, 108 (01) :29-34
[4]   EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS [J].
CHYNOWETH, AG ;
PEARSON, GL .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) :1103-1110
[5]   IONIZATION RATES FOR ELECTRONS AND HOLES IN SILICON [J].
CHYNOWETH, AG .
PHYSICAL REVIEW, 1958, 109 (05) :1537-1540
[6]  
CHYNOWETH AG, 1959, J APPL PHYS, V30, P1812
[7]   AVALANCHE BREAKDOWN IN SILICON [J].
MCKAY, KG .
PHYSICAL REVIEW, 1954, 94 (04) :877-884
[8]   ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J].
MCKAY, KG ;
MCAFEE, KB .
PHYSICAL REVIEW, 1953, 91 (05) :1079-1084
[9]   ELECTRON EMISSION FROM SILICON P-N JUNCTIONS [J].
SENITZKY, P .
PHYSICAL REVIEW, 1959, 116 (04) :874-879
[10]   ON PHOTO-IONIZATION BY FAST ELECTRONS IN GERMANIUM AND SILICON [J].
VAVILOV, VS .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :223-226
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