EFFECTS OF NITRIDE DEPOSITION CONDITIONS ON CHARACTERISTICS OF AN MNOS NON-VOLATILE MEMORY TRANSISTOR

被引：12
|
作者：
NAKAYAMA, H
ENOMOTO, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1979年 / 18卷 / 09期
关键词：
D O I：
10.1143/JJAP.18.1773
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1773 / 1779
页数：7
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