EFFECTS OF NITRIDE DEPOSITION CONDITIONS ON CHARACTERISTICS OF AN MNOS NON-VOLATILE MEMORY TRANSISTOR

被引：12
|
作者：
NAKAYAMA, H
ENOMOTO, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1979年 / 18卷 / 09期
关键词：
D O I：
10.1143/JJAP.18.1773
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1773 / 1779
页数：7
相关论文
共 50 条
  • [1] NON-VOLATILE MNOS "(METAL-NITRIDE-OXIDE-SEMICONDUCTOR) MEMORY
    ANDREYEVA, AN
    ZARKOV, IP
    KONSTANTINOVA, PP
    DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1978, 31 (06): : 651 - 654
  • [2] NON-VOLATILE ANALOG MEMORY IN MNOS CAPACITORS
    WITHERS, RS
    RALSTON, RW
    STERN, E
    ELECTRON DEVICE LETTERS, 1980, 1 (03): : 42 - 45
  • [3] MNOS/CCD NON-VOLATILE ANALOG MEMORY
    WITHERS, RS
    SILVERSMITH, DJ
    MOUNTAIN, RW
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1238 - 1239
  • [4] MNOS-CCD NON-VOLATILE ANALOG MEMORY
    WITHERS, RS
    SILVERSMITH, DJ
    MOUNTAIN, RW
    ELECTRON DEVICE LETTERS, 1981, 2 (07): : 165 - 166
  • [5] SCALING DOWN MNOS NON-VOLATILE MEMORY DEVICES
    YATSUDA, Y
    HAGIWARA, T
    MINAMI, SI
    KONDO, R
    UCHIDA, K
    UCHIUMI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) : 85 - 90
  • [6] Non-Volatile Transistor Memory with a Polypeptide Dielectric
    Liang, Lijuan
    He, Wenjuan
    Cao, Rong
    Wei, Xianfu
    Uemura, Sei
    Kamata, Toshihide
    Nakamura, Kazuki
    Ding, Changshuai
    Liu, Xuying
    Kobayashi, Norihisa
    MOLECULES, 2020, 25 (03):
  • [7] GIMOS - A NON-VOLATILE MOS MEMORY TRANSISTOR
    HSU, ST
    RCA REVIEW, 1981, 42 (03): : 424 - 433
  • [8] IMPROVED MODEL FOR CHARGING CHARACTERISTICS OF A DUAL-DIELECTRIC (MNOS) NON-VOLATILE MEMORY DEVICE
    BEGUWALA, MME
    GUNCKEL, TL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) : 1023 - 1030
  • [9] Temperature-dependent characteristics of non-volatile transistor memory based on a polypeptide
    Liang, Lijuan
    Fukushima, Tomoo
    Nakamura, Kazuki
    Uemura, Sei
    Kamata, Toshihide
    Kobayashi, Norihisa
    JOURNAL OF MATERIALS CHEMISTRY C, 2014, 2 (05) : 879 - 883
  • [10] MATERIALS PROCESSING FOR MNOS NON-VOLATILE MEMORIES
    TOPICH, JA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C77 - C77
12345