HYBRID MAGNETOELECTRIC STATES IN RESONANT TUNNELLING STRUCTURES

[1] RESONANT MAGNETOTUNNELING IN ALGAAS/GAAS TRIPLE BARRIER DIODES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 : 765 - 766

[2] QUENCHING OF THE HALL-EFFECT [J]. PHYSICAL REVIEW LETTERS, 1988, 60 (23) : 2406 - 2409

[3] ELECTRON TUNNELLING INTO INTERFACIAL LANDAU STATES IN SINGLE BARRIER N-TYPE (INGA)AS/INP/(INGA)AS HETEROSTRUCTURES [J]. SOLID-STATE ELECTRONICS, 1988, 31 (3-4) : 711 - 716

[4] Davies R. A., 1987, Semiconductor Science and Technology, V2, P61, DOI 10.1088/0268-1242/2/1/009

[5] EAVES L, PHYSICS FABRICATION, P343

[6] DC PERFORMANCE OF BALLISTIC TUNNELING HOT-ELECTRON TRANSFER AMPLIFIERS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (04) : 207 - 209

[7] HENINI M, IN PRESS

[8] MAGNETIC-FIELD STUDIES OF NEGATIVE DIFFERENTIAL CONDUCTIVITY IN DOUBLE BARRIER RESONANT TUNNELLING STRUCTURES BASED ON N-INP/(INGA)AS [J]. SOLID-STATE ELECTRONICS, 1988, 31 (3-4) : 707 - 710

[9] OBSERVATION OF ELECTRON QUANTUM INTERFERENCE EFFECTS DUE TO VIRTUAL STATES IN A DOUBLE-BARRIER HETEROSTRUCTURE AT ROOM-TEMPERATURE [J]. APPLIED PHYSICS LETTERS, 1988, 52 (16) : 1349 - 1351

[10] OBSERVATIONS OF MAGNETOQUANTIZED INTERFACE STATES BY ELECTRON-TUNNELING IN SINGLE-BARRIER N-(INGA)AS-INP-N+(INGA)AS HETEROSTRUCTURES [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (24) : 2806 - 2809

[1] RESONANT MAGNETOTUNNELING IN ALGAAS/GAAS TRIPLE BARRIER DIODES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 : 765 - 766

[2] QUENCHING OF THE HALL-EFFECT [J]. PHYSICAL REVIEW LETTERS, 1988, 60 (23) : 2406 - 2409

[3] ELECTRON TUNNELLING INTO INTERFACIAL LANDAU STATES IN SINGLE BARRIER N-TYPE (INGA)AS/INP/(INGA)AS HETEROSTRUCTURES [J]. SOLID-STATE ELECTRONICS, 1988, 31 (3-4) : 711 - 716

[4] Davies R. A., 1987, Semiconductor Science and Technology, V2, P61, DOI 10.1088/0268-1242/2/1/009

[5] EAVES L, PHYSICS FABRICATION, P343

[6] DC PERFORMANCE OF BALLISTIC TUNNELING HOT-ELECTRON TRANSFER AMPLIFIERS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (04) : 207 - 209

[7] HENINI M, IN PRESS

[8] MAGNETIC-FIELD STUDIES OF NEGATIVE DIFFERENTIAL CONDUCTIVITY IN DOUBLE BARRIER RESONANT TUNNELLING STRUCTURES BASED ON N-INP/(INGA)AS [J]. SOLID-STATE ELECTRONICS, 1988, 31 (3-4) : 707 - 710

[9] OBSERVATION OF ELECTRON QUANTUM INTERFERENCE EFFECTS DUE TO VIRTUAL STATES IN A DOUBLE-BARRIER HETEROSTRUCTURE AT ROOM-TEMPERATURE [J]. APPLIED PHYSICS LETTERS, 1988, 52 (16) : 1349 - 1351

[10] OBSERVATIONS OF MAGNETOQUANTIZED INTERFACE STATES BY ELECTRON-TUNNELING IN SINGLE-BARRIER N-(INGA)AS-INP-N+(INGA)AS HETEROSTRUCTURES [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (24) : 2806 - 2809