AIGAAS EPITAXIAL-GROWTH ON (111)B-SUBSTRATES BY METALORGANIC VAPOR-PHASE EPITAXY

被引:20
作者
KATO, K
HASUMI, Y
KOZEN, A
TEMMYO, J
机构
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D O I
10.1063/1.342883
中图分类号
O59 [应用物理学];
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页码:1947 / 1951
页数:5
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共 13 条
[1]   INTERDIFFUSION BETWEEN GAAS AND ALAS [J].
CHANG, LL ;
KOMA, A .
APPLIED PHYSICS LETTERS, 1976, 29 (03) :138-141
[3]   PHOTOLUMINESCENCE FROM ALGAAS-GAAS SINGLE QUANTUM-WELLS GROWN ON VARIOUSLY ORIENTED GAAS SUBSTRATES BY MBE [J].
FUKUNAGA, T ;
TAKAMORI, T ;
NAKASHIMA, H .
JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :85-90
[4]   REDUCTION IN THRESHOLD CURRENT-DENSITY OF QUANTUM-WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY ON 0.5-DEGREES MISORIENTED (111)B SUBSTRATES [J].
HAYAKAWA, T ;
KONDO, M ;
SUYAMA, T ;
TAKAHASHI, K ;
YAMAMOTO, S ;
HIJIKATA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (04) :L302-L305
[5]   ENHANCEMENT IN OPTICAL-TRANSITION IN (111)-ORIENTED GAAS-ALGAAS QUANTUM WELL STRUCTURES [J].
HAYAKAWA, T ;
TAKAHASHI, K ;
KONDO, M ;
SUYAMA, T ;
YAMAMOTO, S ;
HIJIKATA, T .
PHYSICAL REVIEW LETTERS, 1988, 60 (04) :349-352
[6]   LAYER GROWTH IN GAAS EPITAXY [J].
NISHIZAWA, J ;
KIMURA, M .
JOURNAL OF CRYSTAL GROWTH, 1986, 74 (02) :331-337
[7]   MORPHOLOGY OF ORGANOMETALLIC CVD GROWN GAAS EPITAXIAL LAYERS [J].
REEP, DH ;
GHANDHI, SK .
JOURNAL OF CRYSTAL GROWTH, 1983, 61 (03) :449-457
[8]   DEPOSITION OF GAAS EPITAXIAL LAYERS BY ORGANOMETALLIC CVD - TEMPERATURE AND ORIENTATION DEPENDENCE [J].
REEP, DH ;
GHANDHI, SK .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) :675-680
[9]   ONE ATOMIC LAYER HETEROINTERFACE FLUCTUATIONS IN GAAS-ALAS QUANTUM WELL STRUCTURES AND THEIR SUPPRESSION BY INSERTION OF SMOOTHING PERIOD IN MOLECULAR-BEAM EPITAXY [J].
SAKAKI, H ;
TANAKA, M ;
YOSHINO, J .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06) :L417-L420
[10]   STUDIES OF GAAS AND ALGAAS LAYERS GROWN BY OM-VPE [J].
SAXENA, RR ;
COOPER, CB ;
LUDOWISE, MJ ;
HIKIDO, S ;
SARDI, VM ;
BORDEN, PG .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :58-63