MODULATION BANDWIDTH OF HIGH-POWER SINGLE-MODE SEMICONDUCTOR-LASERS - EFFECT OF INTRABAND GAIN SATURATION

被引：29
作者：
AGRAWAL, GP
机构：
[1] Institute of Optics, University of Rochester, Rochester
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 01期
关键词：
D O I：
10.1063/1.103568
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of intraband gain saturation on the modulation bandwidth of single-mode semiconductor lasers is discussed by using a nonperturbative form of the optical gain that is valid at high-power levels. The small-signal analysis of the modified rate equations is used to predict the power dependence of the modulation bandwidth. The results are used to discuss the ultimate modulation bandwidth of InGaAsP distributed feedback semiconductor lasers and its dependence on various device parameters.
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页码：1 / 3
页数：3
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