LOW-TEMPERATURE POLYCRYSTALLINE-SILICON TFT ON 7059 GLASS

被引：12

作者：

CZUBATYJ, W

BEGLAU, D

HIMMLER, R

WICKER, G

JABLONSKI, D

GUHA, S

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 08期

关键词：

D O I：

10.1109/55.31753

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：349 / 351

页数：3

共 7 条

[1]

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[2] LARGE GRAIN POLYCRYSTALLINE SILICON BY LOW-TEMPERATURE ANNEALING OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED AMORPHOUS-SILICON FILMS [J].

HATALIS, MK ;

GREVE, DW .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (07) :2260-2266

[3]

HAWKINS WG, 1985, MATER RES SOC S P, V49, P443

[4] THIN-FILM MOSFETS FABRICATED IN LASER-ANNEALED POLYCRYSTALLINE SILICON [J].

LEE, KF ;

GIBBONS, JF ;

SARASWAT, KC .

APPLIED PHYSICS LETTERS, 1979, 35 (02) :173-175

[5] HIGH-PERFORMANCE THIN-FILM TRANSISTORS FROM OPTIMIZED POLYCRYSTALLINE SILICON FILMS [J].

MEAKIN, DB ;

COXON, PA ;

MIGLIORATO, P ;

STOEMENOS, J ;

ECONOMOU, NA .

APPLIED PHYSICS LETTERS, 1987, 50 (26) :1894-1896

[6] HYDROGEN PASSIVATION OF POLYSILICON MOSFETS FROM A PLASMA NITRIDE SOURCE [J].

POLLACK, GP ;

RICHARDSON, WF ;

MALHI, SDS ;

BONIFIELD, T ;

SHICHIJO, H ;

BANERJEE, S ;

ELAHY, M ;

SHAH, AH ;

WOMACK, R ;

CHATTERJEE, PK .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) :468-470

[7]

STEWART RG, 1988, SID INT S, V19, P404

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