LOW-ENERGY ION-BEAM OXIDATION OF SILICON AND GERMANIUM

被引：0
|
作者：
HERBOTS, N
HELLMAN, OC
CULLEN, PA
APPLETON, WR
PENNYCOOK, SJ
NOGGLE, TS
ZUHR, RA
机构：
[1] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139
[2] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37831
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 04期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：S27 / S27
页数：1
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