EXCITON MOLECULE IN SEMICONDUCTORS BY PHONON-ASSISTED 2-PHOTON ABSORPTION

被引：2

作者：

HASSAN, AR ^{[1
]}

机构：

[1] INT CTR THEORET PHYS,TRIESTE,ITALY

来源：

SOLID STATE COMMUNICATIONS | 1978年 / 25卷 / 10期

关键词：

D O I：

10.1016/0038-1098(78)90249-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：817 / 820

页数：4

共 23 条

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[2] ANALYSIS OF INDIRECT 2-PHOTON INTERBAND TRANSITIONS AND OF DIRECT 3-PHOTON TRANSITIONS IN SEMICONDUCTORS [J].

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[3]

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[4] EXCITONIC MOLECULE [J].

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[5]

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[6] 1ST EXCITED-STATE OF BIEXCITON IN CUCL [J].

EKARDT, W ;

SHEBOUL, MI .

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[7]

FALE GM, 1974, PHYS REV LETT, V32, P727

[8] EXCITONIC MOLECULE BOUND TO ISOELECTRONIC TRAP NITROGEN IN GALLIUM PHOSPHIDE [J].

FAULKNER, RA ;

MERZ, JL ;

DEAN, PJ .

SOLID STATE COMMUNICATIONS, 1969, 7 (11) :831-&

[9] GIANT 2-PHOTON ABSORPTION DUE TO EXCITONIC MOLECULE [J].

HANAMURA, E .

SOLID STATE COMMUNICATIONS, 1973, 12 (09) :951-953

[10] EXCITONIC MOLECULE .4. OPTICAL-PROPERTIES [J].

HANAMURA, E .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1975, 39 (06) :1516-1524

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