A SYSTEMATIC ANALYSIS OF DEFECTS IN ION-IMPLANTED SILICON

被引：422
作者：
JONES, KS [1 ]
PRUSSIN, S [1 ]
WEBER, ER [1 ]
机构：
[1] UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1988年 / 45卷 / 01期
关键词：
D O I：
10.1007/BF00618760
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：1 / 34
页数：34
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