RADIATIVE RECOMBINATION IN MELT-GROWN N-TYPE GE-DOPED GAAS

被引：21

作者：

KRESSEL, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 11期

关键词：

D O I：

10.1063/1.1709134

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4383 / &

共 13 条

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[9] PHOTOLUMINESCENCE OF CU-DOPED GALLIUM ARSENIDE [J].

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