共 8 条
[1]
HYDROGEN-SULFIDE DOPING OF GAAS AND ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY (MBE)
[J].
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,
1985, 36 (03)
:147-151
[2]
SURFACE STOICHIOMETRY AND MORPHOLOGY OF MBE GROWN (001)GAAS THROUGH THE ANALYSIS OF RHEED OSCILLATIONS
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1985, 24 (06)
:L478-L480
[3]
MONTE-CARLO SIMULATIONS OF MBE GROWTH OF III-V SEMICONDUCTORS - THE GROWTH-KINETICS, MECHANISM, AND CONSEQUENCES FOR THE DYNAMICS OF RHEED INTENSITY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1985, 3 (02)
:540-546
[6]
DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS
[J].
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,
1983, 31 (01)
:1-8
[7]
PHASE-LOCKED EPITAXY USING RHEED INTENSITY OSCILLATION
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1984, 23 (09)
:L657-L659
[8]
THE DEPENDENCE OF RHEED OSCILLATIONS ON MBE GROWTH-PARAMETERS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1985, 3 (02)
:563-567