共 8 条
- [1] HYDROGEN-SULFIDE DOPING OF GAAS AND ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY (MBE) [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 36 (03): : 147 - 151
- [2] SURFACE STOICHIOMETRY AND MORPHOLOGY OF MBE GROWN (001)GAAS THROUGH THE ANALYSIS OF RHEED OSCILLATIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L478 - L480
- [3] MONTE-CARLO SIMULATIONS OF MBE GROWTH OF III-V SEMICONDUCTORS - THE GROWTH-KINETICS, MECHANISM, AND CONSEQUENCES FOR THE DYNAMICS OF RHEED INTENSITY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 540 - 546
- [6] DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01): : 1 - 8
- [7] PHASE-LOCKED EPITAXY USING RHEED INTENSITY OSCILLATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (09): : L657 - L659
- [8] THE DEPENDENCE OF RHEED OSCILLATIONS ON MBE GROWTH-PARAMETERS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 563 - 567