A SCHOTTKY-GATE FIELD-EFFECT TRANSISTOR MODEL FOR COMPUTER-AIDED-DESIGN OF VERY-HIGH-SPEED GAAS INTEGRATED-CIRCUITS

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作者：

BUYANOV, NN

PASHINTSEV, YI

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来源：

SOVIET MICROELECTRONICS | 1981年 / 10卷 / 04期

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TM [电工技术]; TN [电子技术、通信技术];

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0808 ; 0809 ;

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页码：165 / 169

页数：5

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