FABRICATION OF X-RAY MASKS USING ANISOTROPIC ETCHING OF (110) SI AND SHADOWING TECHNIQUES

被引：14
作者：
TSUMITA, N
MELNGAILIS, J
HAWRYLUK, AM
SMITH, HI
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 04期
关键词：
D O I：
10.1116/1.571246
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1211 / 1213
页数：3
相关论文
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[5]   VERTICAL ETCHING OF SILICON AT VERY HIGH ASPECT RATIOS [J].
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