HOT PHOTOEXCITED ELECTRONS - TIME EVOLUTION OF THE ELECTRON-TEMPERATURE IN HIGH MAGNETIC-FIELDS - APPLICATION TO INSB

被引：2

作者：

CALECKI, D

POTTIER, N

机构：

[1] Groupe de Physique des Solides de l'E.N.S., Laboratoire associé au C.N.R.S. Tour 23, 75221 Paris Cedex 05

来源：

SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 12期

关键词：

D O I：

10.1016/0038-1101(79)90002-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We study the time evolution of the temperature of electrons photoexcited by a laser pulse in the conduction band of a semiconductor in extreme quantum limit conditions. We analyze the influence of several parameters such as magnetic field, photoexcitation intensity, photoexcitation energy, recombination time, lattice temperature and we discuss the role of the various types of electron-phonon scattering mechanisms in the particular case of InSb. © 1979.

引用

页码：999 / 1003

页数：5

共 7 条

[1]

AUSTON DH, 1978, 14TH INT C PHYS SEM

[2]

KOMOLOV VL, 1974, SOV PHYS SEMICOND+, V8, P732

[3] SATURATION OF OPTICAL-ABSORPTION BY A NONEQUILIBRIUM ELECTRON-HOLE PLASMA IN INSB CRYSTALS [J].