COMPUTER-SIMULATION OF CRYSTAL-GROWTH AND DISSOLUTION IN METALS AND SEMICONDUCTORS

被引：0
作者：
CLANCY, P
机构：
[1] SCHOOL OF CHEMICAL ENGINEERING, CORNELL UNIVERSITY, ITHACA
来源：
INTERNATIONAL JOURNAL OF SUPERCOMPUTER APPLICATIONS AND HIGH PERFORMANCE COMPUTING | 1991年 / 5卷 / 04期
关键词：
D O I：
10.1177/109434209100500403
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
[No abstract available]
引用
收藏
页码：10 / 33
页数：24
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