ELASTIC-DEFORMATION OF X-RAY-LITHOGRAPHY MASKS UNDER EXTERNAL LOADINGS

被引:7
作者
CHEN, AC [1 ]
LALAPET, SN [1 ]
MALDONADO, JR [1 ]
机构
[1] IBM CORP,DIV FED SECTOR,MANASSAS,VA 22110
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 06期
关键词
D O I
10.1116/1.585331
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes the elastic deformation of x-ray lithography masks due to external loadings using finite element modeling. The design of the mask support structure is critical to achieve 0.25-mu-m device design rules, for which the mask contribution to the total overlay budget must be kept below 50 nm. Therefore the mask deformation due to external loads should be below 10 nm. Several three-dimensional finite element models were constructed to simulate x-ray lithography masks under gravity loading and external in-plane loading (an out-of-plane loading can be related to an equivalent in-plane loading via the Poisson ratio of the material). A figure of merit was developed to evaluate the relative stiffness of mask support structures, and to guide future x-ray lithography mask designs.
引用
收藏
页码:3306 / 3309
页数:4
相关论文
共 5 条
[1]  
ARMITAGE JD, 1988, SPIE, V921, P208
[2]  
CHEN AJ, IN PRESS
[3]   MECHANICAL DISTORTIONS OF SUPPORT FRAMES FOR X-RAY-LITHOGRAPHY MASKS [J].
LENIUS, P ;
ENGELSTAD, R ;
PALMER, S ;
BRODSKY, E ;
CERRINA, F .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06) :1570-1574
[4]  
Vladimirsky Y., 1990, Microelectronic Engineering, V11, P287, DOI 10.1016/0167-9317(90)90117-C
[5]   CONTROL OF FIXTURING-INDUCED DISTORTION IN X-RAY MASKS [J].
WILSON, AD ;
LAPADULA, C ;
SILVERMAN, JP ;
VISWANATHAN, R ;
VOELKER, H ;
FAIR, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06) :1705-1708