EPITAXIAL SILICON DEPOSITION AT 300-DEGREES-C WITH REMOTE PLASMA PROCESSING USING SIH4/H2 MIXTURES

被引：25

作者：

HATTANGADY, SV

POSTHILL, JB

FOUNTAIN, GG

RUDDER, RA

MANTINI, MJ

MARKUNAS, RJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 03期

关键词：

D O I：

10.1063/1.105589

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial Si films have been deposited on Si(100) at 300-degrees-C by remote plasma-enhanced chemical vapor deposition using SiH4/H-2 mixtures With deposition rates as high as 25 angstrom/min at these low temperatures. Hall measurements of the film show an unintentional doping level of about 1 X 10(17) cm-3 With electron mobilities of 700 cm2 V-1 s-1. Critical to the process is the in situ cleaning of the silicon substrate surface prior to deposition.

引用

收藏

页码：339 / 341

页数：3

相关论文

共 17 条

[11] LOW-TEMPERATURE SILICON EPITAXY BY HOT WALL ULTRAHIGH-VACUUM LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION TECHNIQUES - SURFACE OPTIMIZATION [J].

MEYERSON, BS ;

GANIN, E ;

SMITH, DA ;

NGUYEN, TN .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) :1232-1235

[12] EPITAXIAL-GROWTH OF SILICON BY PHOTOCHEMICAL VAPOR-DEPOSITION AT A VERY LOW-TEMPERATURE OF 200-DEGREES-C [J].

NISHIDA, S ;

SHIIMOTO, T ;

YAMADA, A ;

KARASAWA, S ;

KONAGAI, M ;

TAKAHASHI, K .

APPLIED PHYSICS LETTERS, 1986, 49 (02) :79-81

[13]

Ohmi T., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P53, DOI 10.1109/IEDM.1989.74226

[14] THE EFFECT OF HYDROGEN PLASMA ON THE LOW-TEMPERATURE EPITAXIAL-GROWTH OF INSB [J].

OHSHIMA, T ;

YAMAUCHI, S ;

HARIU, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (01) :L13-L15

[15] REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION OF EPITAXIAL GE FILMS [J].

RUDDER, RA ;

FOUNTAIN, GG ;

MARKUNAS, RJ .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) :3519-3522

[16] NEW LOW-TEMPERATURE PROCESS FOR GROWTH OF GAAS ON SI WITH METALORGANIC MOLECULAR-BEAM EPITAXY ASSISTED BY A HYDROGEN PLASMA [J].

SUEMUNE, I ;

KUNITSUGU, Y ;

TANAKA, Y ;

KAN, Y ;

YAMANISHI, M .

APPLIED PHYSICS LETTERS, 1988, 53 (22) :2173-2175

[17] HYDROGEN SURFACE COVERAGE - RAISING THE SILICON EPITAXIAL-GROWTH TEMPERATURE [J].

WOLFF, SH ;

WAGNER, S ;

BEAN, JC ;

HULL, R ;

GIBSON, JM .

APPLIED PHYSICS LETTERS, 1989, 55 (19) :2017-2019