HYDROGEN AND MATRIX EFFECT ON THE OPTICAL GAP OF SPUTTERED A-SI-H

被引：15

作者：

DENEUVILLE, A ^{[1
]}

BRUYERE, JC ^{[1
]}

MINI, A ^{[1
]}

KAHIL, H ^{[1
]}

DANIELOU, R ^{[1
]}

LIGEON, E ^{[1
]}

机构：

[1] CEN,DEPT RECH FONDAMENTALE,F-38041 GRENOBLE,FRANCE

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1980年 / 35-6卷 / JAN-期

关键词：

D O I：

10.1016/0022-3093(80)90639-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：469 / 473

页数：5

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[8] EFFECT OF ANNEALING ON THE OPTICAL-PROPERTIES OF PLASMA DEPOSITED AMORPHOUS HYDROGENATED SILICON [J].

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SOLAR ENERGY MATERIALS, 1979, 1 (1-2) :29-42

[9]

TSAI CC, 1977, AMORPHOUS LIQUID SEM, P339

[10] SCHOTTKY-BARRIER CHARACTERISTICS OF METAL-AMORPHOUS-SILICON DIODES [J].

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