BANDFILLING IN METALORGANIC CHEMICAL VAPOR-DEPOSITED ALXGA1-XAS-GAAS-ALXGA1-XAS QUANTUM-WELL HETEROSTRUCTURE LASERS

被引：32

作者：

HOLONYAK, N

KOLBAS, RM

REZEK, EA

CHIN, R

DUPUIS, RD

DAPKUS, PD

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] ROCKWELL INT,ELECTR RES CTR,DIV ELECTR DEVICES,ANAHEIM,CA 92803

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 11期

关键词：

D O I：

10.1063/1.324494

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5392 / 5397

页数：6

共 20 条

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[2] GAAS LOWER CONDUCTION-BAND MINIMA - ORDERING AND PROPERTIES [J].

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[3]

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[5]

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[7]

Dingle R, 1975, FESTKORPERPROBLEME, V15, P21

[8] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1977, 31 (07) :466-468

[9] GA(1-X)ALXAS-GA(1-Y)ALYAS DOUBLE-HETEROSTRUCTURE ROOM TEMPERATURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1977, 31 (12) :839-841

[10] ROOM-TEMPERATURE LASER OPERATION OF QUANTUM-WELL GA(1-X)ALXAS-GAAS LASER-DIODES GROWN BY ORGANOMETALLUIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD ;

HOLONYAK, N ;

REZEK, EA ;

CHIN, R .

APPLIED PHYSICS LETTERS, 1978, 32 (05) :295-297

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