VARIATION OF MICROSTRUCTURE IN EPILAYERS OF GAINASP/GAAS AND GAINAS/INP WITH HEAT-TREATMENT

被引：0
作者：
IWAMATSU, T
KUWANO, N
OKI, K
机构：
[1] KYUSHU UNIV,DEPT MAT SCI TECHNOL,FUKUOKA 812,JAPAN
[2] KYUSHU UNIV,GRAD SCH ENGN SCI,FUKUOKA 812,JAPAN
来源：
JOURNAL OF ELECTRON MICROSCOPY | 1989年 / 38卷 / 03期
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中图分类号：
TH742 [显微镜];
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页码：219 / 219
页数：1
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