VARIATION OF MICROSTRUCTURE IN EPILAYERS OF GAINASP/GAAS AND GAINAS/INP WITH HEAT-TREATMENT

被引：0

作者：

IWAMATSU, T

KUWANO, N

OKI, K

机构：

[1] KYUSHU UNIV,DEPT MAT SCI TECHNOL,FUKUOKA 812,JAPAN

[2] KYUSHU UNIV,GRAD SCH ENGN SCI,FUKUOKA 812,JAPAN

来源：

JOURNAL OF ELECTRON MICROSCOPY | 1989年 / 38卷 / 03期

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暂无

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

页码：219 / 219

页数：1

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