TEMPERATURE FLUCTUATIONS DURING GROWTH AND IMPURITY SEGREGATION IN INSB CRYSTALS

被引：4

作者：

ALBON, N

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1962年 / 33卷 / 09期

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D O I：

10.1063/1.1702587

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2912 / +

页数：1

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[1] ANISOTROPIC SEGREGATION IN INSB [J].

ALLRED, WP ;

BATE, RT .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (03) :258-261

[2] LIQUID-SOLID INTERFACE SHAPE OBSERVED IN SILICON CRYSTALS GROWN BY THE CZOCHRALSKI METHOD [J].

EDWARDS, WD .

CANADIAN JOURNAL OF PHYSICS, 1960, 38 (03) :439-443

[3] IMPURITY STRIATIONS IN UNROTATED CRYSTALS OF INSB [J].

GATOS, HC ;

STRAUSS, AJ ;

LAVINE, MC ;

HARMON, TC .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (10) :2057-&

[4] SEGREGATION OF IMPURITIES DURING THE GROWTH OF GERMANIUM AND SILICON CRYSTALS [J].

HALL, RN .

JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) :836-839

[5] SILICON N-P-N GROWN JUNCTION TRANSISTORS [J].

TANENBAUM, M ;

VALDES, LB ;

BUEHLER, E ;

HANNAY, NB .

JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) :686-692