ANNEALING OF DEFECTS BY NANOSECOND LASER-PULSES AFTER IMPLANTATION OF SMALL ION DOSES

被引：0
作者：
KACHURIN, GA
NIDAEV, EV
DANYUSHKINA, NV
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来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1980年 / 14卷 / 04期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：386 / 388
页数：3
相关论文
共 9 条
[1]  
KACHURIN GA, 1978, SOV PHYS SEMICOND+, V12, P1229
[2]  
KACHURIN GA, 1980, SOV PHYS SEMICOND+, V14, P251
[3]  
KACHURIN GA, 1978, P INT C ION BEAM MOD
[4]  
Mayer J. W., 1970, ION IMPLANTATION SEM
[5]   DAMAGE-DEPENDENT ELECTRICAL ACTIVATION OF ION-IMPLANTED SILICON .1. EXPERIMENTS ON PHOSPHORUS IMPLANTS [J].
MIYAO, M ;
YOSHIHIRO, N ;
TOKUYAMA, T ;
MITSUISHI, T .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :223-230
[6]   DEPTH OF MELTING PRODUCED BY PULSED-LASER IRRADIATION [J].
NARAYAN, J .
APPLIED PHYSICS LETTERS, 1979, 34 (05) :312-315
[7]  
SMIRNOVA LS, 1977, PHYSICAL PROCESSES I
[8]  
VASILEV VK, 1968, FIZ TVERD TELA+, V9, P1503
[9]   THEORETICAL-ANALYSIS OF THERMAL AND MASS-TRANSPORT IN ION-IMPLANTED LASER-ANNEALED SILICON [J].
WANG, JC ;
WOOD, RF ;
PRONKO, PP .
APPLIED PHYSICS LETTERS, 1978, 33 (05) :455-458
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