OBSERVATION OF 2-DIMENSIONAL ELECTRONS IN LPE-GROWN GAAS-ALXGA1-XAS HETEROJUNCTIONS

被引：48

作者：

TSUI, DC

LOGAN, RA

机构：

[1] Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 02期

关键词：

D O I：

10.1063/1.91040

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed a two-dimensional electron gas at the interface of asymmetrically doped GaAs-AlxGa1-xAs heterojunctions grown by LPE. Our results demonstrate unequivocally that LPE can be used to grow GaAs-AlxGa1-xAs heterojunctions with interfacial electrical properties comparable to those achieved by MBE.

引用

页码：99 / 101

页数：3

共 11 条

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