TRAPATT OSCILLATORS WITH HIGH-FREQUENCY STABILITY AND HIGH-POWER

被引:0
作者
FURUKAWA, S
OGITA, Y
机构
[1] TOKYO INST TECHNOL,RES LAB PRECISION MACHINERY & ELECTR,TOKYO 152,JAPAN
[2] TOKYO INST TECHNOL,FAC ENGN,TOKYO 152,JAPAN
来源
ELECTRONICS & COMMUNICATIONS IN JAPAN | 1974年 / 57卷 / 09期
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:96 / 104
页数:9
相关论文
共 11 条
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[3]   CIRCUITS FOR HIGH-EFFICIENCY AVALANCHE-DIODE OSCILLATORS [J].
EVANS, WJ .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1969, MT17 (12) :1060-+
[4]   COMPUTER EXPERIMENTS ON TRAPATT DIODES [J].
EVANS, WJ .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1970, MT18 (11) :862-+
[5]  
FURUKAWA S, 1972, ELECTRON COMMUN JPN, V55, P56
[6]  
FURUKAWA S, 1971, IECE GROUP ELECTR ED, V71
[7]  
FURUKAWA S, 1973, NATL CONV REC IECE J, P858
[8]  
FURUKAWA S, 1973, IECE GROUP MICROWAVE, V73
[9]  
LIU SG, 1969, IEEE T MICROW THEORY, VMT17, P1068