FERMI LEVEL PINNING ON (110) GAAS-SURFACES STUDIED BY CPD AND SPV TOPOGRAPHIES

被引：40
|
作者：
PALAU, JM
TESTEMALE, E
LASSABATERE, L
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 02期
关键词：
Compendex;
D O I：
10.1116/1.571103
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
SEMICONDUCTING GALLIUM ARSENIDE
引用
收藏
页码：192 / 200
页数：9
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