ANALYSIS OF THE SWITCHING SPEED OF A SUBMICROMETER-GATE CMOS-SOS INVERTER

被引：6

|

作者：

MAYER, DC

PERKINS, WE

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 07期

关键词：

D O I：

10.1109/T-ED.1981.20449

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：886 / 888

页数：3

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共 38 条

[1] SUBMICROMETER-GATE CMOS-SOS LOGIC
MAYER, DC
PERKINS, WE
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C341 - C341
[2] CMOS-SOS TRANSISTORS WITH SUBMICROMETER GATE LENGTHS
MAYER, DC
YUAN, JH
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) : 1345 - 1345
[3] SUBMICROMETER POLYSILICON GATE CMOS-SOS TECHNOLOGY
IPRI, AC
SOKOLOSKI, JC
FLATLEY, DW
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (07) : 1275 - 1279
[4] HIGH-SPEED MOSI2-GATE CMOS-SOS DEVICES
MIZUTANI, Y
MAEGUCHI, K
MOCHIZUKI, T
KIMURA, M
ISOBE, M
UCHIDA, Y
TANGO, H
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) : 117 - 122
[5] CMOS-SOS NAND GATE SAPPHIRE PHOTOCURRENT COMPENSATION
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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2617 - 2620
[6] PTSI-POLYSILICON GATE CMOS-SOS TRANSISTORS
WEITZEL, CE
TANGUAY, DJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : C143 - C143
[7] RADIATION-HARDENED SILICON-GATE CMOS-SOS
LEE, SN
KJAR, RA
PEEL, JL
KINOSHITA, G
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2205 - 2208
[8] GATE OXIDE INTEGRITY ENHANCED BY BACKFILL OXIDE IN SILICON-GATE CMOS-SOS
LEE, SN
WILLIAMS, RA
KJAR, RA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C342 - C342
[9] RADIATION TOLERANT SILICON GATE CMOS-SOS USING ION-IMPLANTATION
IPRI, AC
FLATLEY, DW
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (09) : 1110 - 1112
[10] HIGH-PERFORMANCE SILICON-GATE CMOS-SOS PROCESS-DEVELOPMENT
LEE, SN
OKI, TJ
GREEN, LG
SEYMOUR, RN
PHILLIPS, DH
KJAR, RA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (08) : C307 - C307

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