MODULATION BANDWIDTH ENHANCEMENT IN SINGLE QUANTUM-WELL GAAS/ALGAS LASERS

被引:3
作者
CHEN, TR
ZHAO, B
YAMADA, Y
ZHUANG, YH
YARIV, A
机构
[1] TJ Watson Sr. Laboratories of Applied Physics, California Institute of Technology, Pasadena
关键词
SEMICONDUCTOR LASERS; LASERS;
D O I
10.1049/el:19921275
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The state filling effect in semiconductor quantum well lasers significantly affects the modulation dynamics. The state filling effect strongly depends on the optical confining layer structure. As a direct consequence of the reduction of the state filling effect in a properly designed graded index separate confinement heterostructure, a record 3 dB bandwidth in excess of 9 GHz has been obtained in uniformly pumped single quantum well GaAs/AlGaAs lasers by a careful tailoring of the device parameters.
引用
收藏
页码:1989 / 1991
页数:3
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