CHEMICAL ETCHING OF SILICON .2. THE SYSTEM HF, HNO3, H2O, AND HC2H3O2

被引：183
作者：
ROBBINS, H
SCHWARTZ, B
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1960年 / 107卷 / 02期
关键词：
D O I：
10.1149/1.2427617
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：108 / 111
页数：4
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