DETERMINATION OF CARRIER CONCENTRATION AND COMPENSATION MICROPROFILES IN GAAS

被引：14

作者：

JASTRZEBSKI, L ^{[1
]}

LAGOWSKI, J ^{[1
]}

WALUKIEWICZ, W ^{[1
]}

GATOS, HC ^{[1
]}

机构：

[1] MIT, DEPT MAT SCI & ENGN, CAMBRIDGE, MA 02139 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 04期

关键词：

D O I：

10.1063/1.327867

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2301 / 2303

页数：3

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[7] SEM OBSERVATION OF DOPANT STRIAE IN SILICON [J].

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