A METAL AMORPHOUS-SILICON GERMANIUM ALLOY SCHOTTKY-BARRIER FOR INFRARED OPTOELECTRONIC IC ON GLASS SUBSTRATE APPLICATION

The effects of material and structure parameters on amorphous silicon-germanium alloy Schottky barrier diode's responsivity have been investigated in detail. The effects contradict each other. A compromise shall be made in selecting parameters for construction of a Si1-xGe(x):H Schottky barrier for IR detector. The optimized amorphous silicon-germanium alloy Schottky diode using x = 0.43 alloy with a 900-nm thickness i-layer was found to have a peak at 850 nm with responsivity of 0.6 A/W under -2-V bias. The diode also has a response time of 33-mu-s and slight photodegradation. Thus the diode becomes a candidate for manufacturing the infrared OEIC (Optoelectronic Integrated Circuit) on glass substrate in applications which require size, reproducibility, and low cost more than sensitivity.