A METAL AMORPHOUS-SILICON GERMANIUM ALLOY SCHOTTKY-BARRIER FOR INFRARED OPTOELECTRONIC IC ON GLASS SUBSTRATE APPLICATION

被引：30

作者：

FANG, YK ^{[1
]}

HWANG, SB ^{[1
]}

CHEN, KH ^{[1
]}

LIU, CR ^{[1
]}

KUO, LC ^{[1
]}

机构：

[1] IND TECHNOL RES INST,MAT RES LABS,THIN FILM TECHNOL LAB,HSINCHU 31015,TAIWAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 06期

关键词：

D O I：

10.1109/16.137314

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of material and structure parameters on amorphous silicon-germanium alloy Schottky barrier diode's responsivity have been investigated in detail. The effects contradict each other. A compromise shall be made in selecting parameters for construction of a Si1-xGe(x):H Schottky barrier for IR detector. The optimized amorphous silicon-germanium alloy Schottky diode using x = 0.43 alloy with a 900-nm thickness i-layer was found to have a peak at 850 nm with responsivity of 0.6 A/W under -2-V bias. The diode also has a response time of 33-mu-s and slight photodegradation. Thus the diode becomes a candidate for manufacturing the infrared OEIC (Optoelectronic Integrated Circuit) on glass substrate in applications which require size, reproducibility, and low cost more than sensitivity.

引用

页码：1350 / 1354

页数：5

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