Annealing effects on V2O5-x thin films deposited by non reactive sputtering

被引:1
作者
Malini, D. Rachel [1 ]
Sivakumar, R. [2 ]
Sanjeeviraja, C. [3 ]
机构
[1] Amer Coll, Dept Phys, Madurai 625002, Tamil Nadu, India
[2] Alagappa Univ, Directorate Distance Educ, Karaikkudi 630004, Tamil Nadu, India
[3] AC Coll Engn & Tech, Dept Phys, Karaikkudi 630004, Tamil Nadu, India
来源
NANOSYSTEMS-PHYSICS CHEMISTRY MATHEMATICS | 2016年 / 7卷 / 03期
关键词
vanadium oxide; rf magnetron sputtering; annealing;
D O I
10.17586/2220-8054-2016-7-3-547-552
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Thin films of vanadium oxide (V2O5-x) were prepared by rf magnetron sputtering process and are heat treated to study the annealing effect. As-deposited thin films are amorphous in nature and crystallinity is improved by annealing the sample. Thin layers with high density and small grain size varying from 36 nm to 70 nm were seen in the FESEM images of as-deposited thin films. In the case of annealed thin films, it has been transformed to thin elongated rod like structure with 202.5 nm length and an average diameter of approximately 48 nm. Optical properties were studied by using UV-Vis-NIR spectrophotometer and the reduction in transmission in annealed thin films is due to the crystalline nature of thin films. Studies were done on the samples by taking photoluminescence and Laser Raman spectra.
引用
收藏
页码:547 / 552
页数:6
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