EFFECT OF FLOW DIRECTION ON ETCH UNIFORMITY IN PARALLEL-PLATE (RADIAL FLOW) ISOTHERMAL PLASMA REACTORS

被引：12

作者：

VENKATESAN, SP

TRACHTENBERG, I

EDGAR, TF

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 12期

关键词：

D O I：

10.1149/1.2100371

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：3194 / 3197

页数：4

共 10 条

[1]

BUTLER S, COMMUNICATION

[2] MASS-TRANSFER ANALYSES OF THE PLASMA DEPOSITION PROCESS [J].

CHEN, I .

THIN SOLID FILMS, 1983, 101 (01) :41-53

[3] MODELING OF REACTORS FOR PLASMA PROCESSING .1. SILICON ETCHING BY CF4 IN A RADIAL FLOW REACTOR [J].

DALVIE, M ;

JENSEN, KF ;

GRAVES, DB .

CHEMICAL ENGINEERING SCIENCE, 1986, 41 (04) :653-660

[4] COMPUTER-SIMULATION OF A CF4 PLASMA-ETCHING SILICON [J].

EDELSON, D ;

FLAMM, DL .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (05) :1522-1531

[5] THE REACTION OF FLUORINE-ATOMS WITH SILICON [J].

FLAMM, DL ;

DONNELLY, VM ;

MUCHA, JA .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3633-3639

[6]

Levenspiel O., 1998, CHEM REACTION ENG

[7]

Reid R.C., 1977, PROPERTIES GASES LIQ, V3rd

[8] PLASMA DEPOSITION OF INORGANIC SILICON CONTAINING FILMS [J].

REINBERG, AR .

JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (03) :345-375

[9] DISPERSION OF SOLUBLE MATTER IN SOLVENT FLOWING SLOWLY THROUGH A TUBE [J].

TAYLOR, G .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1953, 219 (1137) :186-203

[10]

VENKATESAN S, UNPUB

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